Publikationen
2013
- C. Banzhaf, M. Grieb, A. Trautmann, A. Bauer, L . Frey: »Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures«, Materials Science Forum 740-742, 691-694 (2013)
- T. Behrens, T. Suenner, E. Geinitz, A. Schletz, L . Frey: »Optimization of copper top-side metallization for high performance SiC-devices«, Materials Science Forum 740-742, 801-804 (2013)
- V. Häublein, G. Temmel, H. Mitlehner, G. Rattmann, C . Strenger, A . Hürner, A. Bauer, H . Ryssel, L . Frey: »Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC«, Materials Science Forum 740-742, 887-890 (2013)
- A . Hürner, T. Schlegl, B. Adelmann, H. Mitlehner, R. Hellmann, A. Bauer, L . Frey: »Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation«, Materials Science Forum 740-742, 773-776 (2013)
- V. Iglesias, J. Martin-Martinez, M. Porti, R. Rodriguez, M. Nafria, X. Aymerich, T. Erlbacher, M. Rommel, K . Murakami, A. Bauer, L . Frey, G. Bersuker: »Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries«, Microelectronic Engineering 109, 129-132 (2013)
- N. Kölpin, M. Wegener, E. Teuber, S . Polster, L . Frey, A. Roosen: »Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices«, Journal of Materials Science 48, 1623-1631 (2013)
- S. Noll, D. Scholten, M. Grieb, A. Bauer, L . Frey: »Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi«, Materials Science Forum 2013, 521-524 (2013)
- M. Rommel, J. Jambreck, M. Lemberger, A. Bauer, L . Frey, K. Murakami, C. Richter, P. Weinzierl: »Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction«, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 31, art. no. 01A108 (2013)
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
Nach oben
UnivIS