Prof. Dr. rer. nat. Lothar Frey
| Name: | Prof. Dr. rer. nat. Lothar Frey
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| Postal address: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Room: | 1.122 |
| Phone number: | 09131/85-28633 |
| Fax number: | 09131/85-28698 |
| E-mail: | lothar.frey@leb.eei.uni-erlangen.de |
| Office hours: | weekly on tuesday 9:00 - 10:00
1.122
Bitte bei Sekretariat (1.121) anmelden.
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Courses / Lectures
Supervised theses
2013
2012
2011
2010
2009
2002
1999
1997
1996
1995
1994
- Erzeugung von Strukturen im Nanometerbereich mittels fokussierter Ionenstrahlen
- Schichtdickenmessungen an dünnen Siliziumdioxidschichten mittels Ellipsometrie und Röntgen-Photoelektronen-Spektroskopie
- Untersuchung phosphorimplantierten Siliciums mittels hochauflösender Röntgendiffraktometrie
1993
1992
Publications
2013
2012
2011
2010
2009
2008
2007
2006
2005
- »Additional Peaks in Mass Spectra Due to Charge Exchange Events and Dissociation of Molecular Ions During Extraction«, Nuclear Instruments and Methods in Physics Research B 237, 346-350 (2005)
- »Aluminium Nitride Thin Films for a Micromechanical Ultrasonic Liquid Nebulizer«, SENSORS AND MICROSYSTEMS, Singapore (2005)
- »Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing«, Proceedings of ECSCRM, Materials Science Forum, 483 (2005)
- »Characterization of Interface State Densities by Photocurrent Analysis: Comparison of Results for Different Insulator Layers«, Microelectronic Engineering 80, 50-53 (2005)
- »Characterization of Interface State Denisties by Photocurrent Analysis: Comparison of Results for Different Insulator Layers«, Poster Presentation, Conference on Insulating Fillms on Semiconductors (INFOS) 2005, Leuven, Belgium (2005)
- »Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren«, Chemie Ingenieur Technik 77, 1215 (2005)
- »Electrical properties of hafnium silicate films obtained form a single-source MOCVD precursor«, Microelectronics Reliability, 819 (2005)
- »High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor«, 9, 873 (2005)
- »Implantation and Annealing of Aluminium in 4H Silicon Carbide«, Nuclear Instruments and Methods in Physics Research B 237, 68-71 (2005)
- »Investigations into the Wear of a WL10 Ion Source«, Nuclear Instruments and Methods in Physics Research B 237, 341-345 (2005)
- »Nanoelectronics at the Fraunhofer IISB and the University in Erlangen«, Poster for the "First International Nanotechnology Conference on Communication & Cooperation" (INC 1), San Francisco, CA, USA (2005)
- »Nanotechnology in the Fraunhofer Microelectronics Alliance (VµE)«, Poster for the "First International Nanotechnology Conference on Communication & Cooperation" (INC 1), San Francisco, CA, USA (2005)
- »Stempel für Mikrochips«, Zukunft im Brennpunkt, Arbeitsgemeinschaft der Bayerischen Forschungsverbünde (abayfor) 4/2005, 75 (2005)
- »Thin HfxTiySizO Films with Varying Hf to Ti Contents as Candidates for High-k Dielecrics«, 5/2005, 125 (2005)
- »Triple Trench Gate IGBTs«, Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs (ISPSD) 2005, 251-254 (2005)
- »Triple Trench Gate IGBTs«, 17th International Symposium on Power Semiconductor Devices & ICs (ISPSD), Santa Barbara, CA, USA (2005)
- »Wafer Scale Characterization of Interface State Densities Without Test Structures by Photocurrent Analysis«, Electrochemical Society Proceedings, 10, 113 (2005)
- »Wafer Scale Characterization of Interface State Densities Without Test Structures by Photocurrent Analysis«, DECON 2005, "Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV", Grenoble, France (2005)
2004
2003
2002
2001
2000
1999
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