Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
1999
1998
1997
1996
1995
1994
1993
1991
1990
1988
1987
Publikationen
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
- »"Monte Carlo Simulation and Modeling of Ion Implantation Induced Contamination Profiles«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, - (2000)
- »A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation«, IEICE TRANSACTION on Electronics E83-C, 1259-1266 (2000)
- »Adhesion and proliferation of keratinocytes on ion beam modified polyethylene«, Journal of materials science: Materials in medicine, 655-660 (2000)
- »Aspects of Barium Contamination in High Dielectric Dynamic Random Access Memories«, J. Electrochem. Soc 147, 4297 (2000)
- »Contamination Control for Ion Implantation«, IIT School, Edgewater, 564-601 (2000)
- »Contamination Control for Ion Implantation«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
- »Defects and Gallium-Contamination During Focused Ion Beam Micro Machining«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
- »Diffusion (IMEC Short Course)«, Silicon Processing for ULSI Circuit Fabrication, Leuven, Belgien (2000)
- »Electrical Reliability Aspects of Through the Gate Implanted MOS-Structures with Thin Oxides«, 11th Workshop on Dielectrics in Microelectronics (WoDiM), München (2000)
- »Enhanced Depth-Resolution Analysis with Medium Energy Ion scattering (MEIS) for Shallow Junction Profiling«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
- »Field emitter array fabricated using focused ion and electron beam induced reaction«, Journal of Vacuum Science and Technology B 2, 976-979 (2000)
- »Gate Oxide Damage Due to Through the Gate Implantation in MOS-Structures with Ultrathin and Standard Oxides«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, 103-106 (2000)
- »Investigation of Molybdenum Contamination in 11B+ and 31P+ Implants«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
- »Ion Implantation«, Silicon Processing for ULSI Circuit Fabrication (IMEC short course), Leuven, Belgien (2000)
- »Modeling the pH response of silicon nitride ISFET devices«, Sensors and Actuators B: Chemical 68, 307-312 (2000)
- »Modellierung der Diffusion von Aluminium in Silicium«, Berichtskolloquium DFG-Schwerpunktprogramm "Halbleiterbauelemente hoher Leistung", Karlsruhe, 8 (2000)
- »Modelling of Intrinsic Aluminum Diffusion for Future Power Devices«, 30th European Solid State Device Research Conference, Cork, Irland, 176-179 (2000)
- »Monte Carlo Simulation and Modeling of Ion Implantation Induced Contamination Profiles«, Ion Implantation Technology 2000, Alpbach (2000)
- »Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide«, Materials Science Forum, 338-342 (2000)
- »Safety Considerations for Ion Implanters«, IIT School, Edgewater (2000)
- »Safety Considerations for Ion Implanters«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
1999
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