Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
1999
1998
1997
1996
1995
1994
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1991
1990
1988
1987
Publikationen
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
- »Amino acids grafting of Ar+ ions modified PE«, Radiation Physics and Chemistry, 89-93 (2001)
- »Barium, Strontium and Bismuth Contamination in CMOS Processes«, Solid State Phenomena, 9-14 (2001)
- »Chemische Dampfphasenabscheidung von Materialien mit hoher Dielektrizitätskonstanten am Beispiel Barium-Strontium-Titanat«, Vortrag auf der Konferenz Materials Week 2001, München (2001)
- »Electrical reliability aspects of through the gate implanted MOS structures with thin oxides«, Microelectronics Reliability 41, 987-990 (2001)
- »Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining«, Microelectronic Engineering 57-58, 721-728 (2001)
- »Impact of Platinum Contamination on Ferroelectric Memories«, Integrated Ferroelectrics (Proceedings of the 13th International Symposium on Integrated Ferroelectrics ISIF 2001 - Colorado Springs, CO, USA) 37, 75-82 (2001)
- »Integrated metrology: An enabler for advanced process control (APC)«, , 118-130 (2001)
- »Limitations of focused ion beam nanomachining«, Journal of Vacuum Science and Technology 19, 2533-2538 (2001)
- »MOCVD of Titanium Dioxide on the Basis of New Precursors«, ERMSVortrag EMRS 2001, Strasbourg (Frankreich) (2001)
- »Proceedings of the 12th International Conference on Ion Implantation Technology«, IIT 2000, Alpbach, Österreich (2001)
- »Proceedings of the 31th European Solid-State Device Research Conference«, ESSDERC 2001, Nürnberg (2001)
- »Recombination lifetimes of iron contaminated silicon wafers: Characterization through a single set of capture cross-sections«, GADEST 2001, S. Tecla (Italien, 373-380 (2001)
- »Reliability of ultra-thin N20-nitrided oxides grown by RTP under low pressure in different gas atmospheres«, Solid-State Electronics 45, 1381-1389 (2001)
- »Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode«, Solid-State Electronics 8, 1251-1256 (2001)
- »Tungsten, Nickel, and Molybdenum Schottky Diodes with Different Edge Termination«, Applied Surface Science 7274, - (2001)
- »Tungsten, Nickel, and Molybdenum Schottky Diodes with Different Edge Termination«, E-MRS 2001 Spring Meeting, Strasbourg (Frankreich) (2001)
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