Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
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2001
1999
1998
1997
1996
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1991
1990
1988
1987
Publikationen
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
- »Cell Adhesion on Modified Polyethylene«, Journal of Materials Science 37 (6), 1183 (2002)
- »Characterisation of BaxSr1 xTiO3 Films Using Spectroscopic Ellipsometry, Rutherfo¬rd Backscattering Spectrometry and X Ray Diffraction«, Journal of Non Crystalline Solids 303 (1), 179-184 (2002)
- »Determination of Aluminum Diffusion Parameters in Silicon«, Journal of Applied Physics, accepted for publication (2002)
- »Development of Enhanced Depth-resolution Technique for Shallow Dopant Profiles«, Nuclear Instruments and Methods in Physics Research 1-4, 26 (2002)
- »Effect of Barium Contamination on Gate Oxide Integrity in High-k DRAM«, Journal of Non-Crystalline Solids 303, 12 (2002)
- »HandMon ISPM: Handling Monitoring in a Loading Station of a Furnace«, 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop 2002, Boston, Massachusetts, 113 (2002)
- »Influence of Photoresist Pattern on Charging Damage During High Current Ion Implantation«, 7th Int. Symp. On Plasma & Process Induced Damage, Maui, Hawaii, USA, 106-109 (2002)
- »MOCVD of titanium dioxid on the basis of new precursors«, Journal of non-crystalline solids 303, 64-68 (2002)
- »Phi Scatterometry for Integrated Linewidth and Process Control in DRAM Manufacturing«, IEEE Transactions on Semiconductor Manufacturing 15 (4), 470 (2002)
- »Platinum Contamination Issues in Ferroelectric Memories«, J. Appl. Phys. 92, 3257 (2002)
- »Recombination Lifetimes of Iron-contaminated Silicon Wafers: Characterization through a Single Set of Capture Cross sections«, Solid State Phenomena 82-84, 373 (2002)
- »Simulation of the Influence of Via Sidewall Tapering on Step Coverage of Sputter deposited Barrier Layers«, Microelectronic Engineering 64 (1-4), 321-328 (2002)
2001
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