Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
2006
2005
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Publikationen
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
- »Defect Inspection Method for Quality Control in a Reclaim Line«, Proceedings of the 4th European AEC/APC Conference 2003, 119 (2003)
- »Die Entwicklung der Mikroelektronik bis 2015 nach der ITRS (International Technology Roadmap for Semiconductors)«, 11. GMM/ITG Fachtagung, E.I.S.-Workshop 2003, Kongresszentrum Erlangen (2003)
- »Die Rolle der Technologie: Leading Edge Silicon«, Treffen des ZVEI Präsidial-Arbeitskreises, Frankfurt (2003)
- »Different Ion Implanted Edge Terminations for Schottky Diodes on SiC«, 14th International Conference on Ion Implantation Technology (IIT2002), Taos (NM), USA, 139-142 (2003)
- »Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors«, Microelectronics Reliability 43, 1253-1257 (2003)
- »Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors«, WoDiM 2002, Grenoble, France, 53-56 (2003)
- »ENCOTION A New Simulation Tool for Energetic Contamination Analysis«, IIT2002, Taos (NM),USA, 217-220 (2003)
- »Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation«, Ion Implantation Technology, Taos, New Mexico, USA, 291-294 (2003)
- »Investigation of Implantation-Induced Defects in Thin Gate Oxides Using Low Field Tunnel Currents«, 14th International Conference on Ion Implantation Technology (IIT2002), Taos (NM), USA, 3 (2003)
- »Investigation of Lanthanum Contamination from a Lanthanated Tungsten Ion Source«, 14th International Conference on Ion Implantation Technology (IIT2002), Taos (NM), USA, 346-349 (2003)
- »Investigation of Rapid Thermal Annealed p-n Junctions in SiC«, International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Lyon (Frankreich) (2003)
- »Ion Implantation and Shallow Junction Formation«, IMEC-Workshop "Silicon Processing for ULSI Circuit Fabrication, Leuven, Belgien (2003)
- »Ionenimplantation in Halbleiter - 30 Jahre und kein Ende«, Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie IISBIISB-Jahrestagung "Ionenstrahlen in der Siliciumtechnologie, Erlangen (2003)
- »Modelling of the Influence of the Schottky Barrier Inhomogeneities on SiC Diode Characteristics«, International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Lyon (Frankreich), - (2003)
- »Nanoscale Effects in Focused Ion Beam Processing«, Applied Physics A76, 1017-1023 (2003)
- »Non-destructive characterization of strontium bismuth tantalate films«, Materials Science in Semiconductor Processing 5, 141 (2003)
- »Optical characterization of ferroelectric Strontium-Bismuth-Tantalate (SBT) thin films«, Proceedings of the 3rd International Conference on Spectroscopic Ellipsometry (ICSE-3), 06.-11.07.2003, Wien, - (2003)
- »Quantum Mechanical Studies of Boron Clustering in Silicon«, , 381 (2003)
- »Three Dimensional Simulation of Superconformal Copper Deposition Based on the Curvature Enhanced Accelerator Coverage Mechanism«, Copper Interconnects, New Contact Metallurgies/Structures, and Low k Interlevel Dielectrics II, Proceedings of the ECS Fall Meeting, Orlando (FL), USA, The Electrochemical Soc., 21 (2003)
- »Trench Sidewall Doping for Lateral Power Devices«, ESSDERC 2003, Estoril, Portugal, 397 (2003)
- »Wafer Reclaim in Semiconductor Manufacturing«, VDMA Productronics 7th edition, 23 (2003)
- »Zirconium silicate films obtained from novel MOCVD precursors«, Journal of Non-Crystalline Solids 322, 147-153 (2003)
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