Prof. Dr. rer. nat. Lothar Frey
| Name: | Prof. Dr. rer. nat. Lothar Frey
|
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Zimmer: | 1.122 |
| Telefonnummer: | 09131/85-28633 |
| Fax: | 09131/85-28698 |
| E-Mail: | lothar.frey@leb.eei.uni-erlangen.de |
| Sprechstunde: | wöchentlich dienstags 9:00 - 10:00
1.122
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Lehrveranstaltungen
Betreute Arbeiten
2013
2012
2011
2010
2009
2002
1999
1997
1996
- Erstellung und Test eines Patterngenerators für die Mikrobearbeitung mittels FIB
1995
1994
1993
1992
Publikationen
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
- »Different Ion Implanted Edge Terminations for Schottky Diodes on SiC«, 14th International Conference on Ion Implantation Technology (IIT2002), Taos (NM), USA, 139-142 (2003)
- »Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors«, Microelectronics Reliability 43, 1253-1257 (2003)
- »Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors«, WoDiM 2002, Grenoble, France, 53-56 (2003)
- »ENCOTION A New Simulation Tool for Energetic Contamination Analysis«, IIT2002, Taos (NM),USA, 217-220 (2003)
- »Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation«, Ion Implantation Technology, Taos, New Mexico, USA, 291-294 (2003)
- »Investigation of Implantation-Induced Defects in Thin Gate Oxides Using Low Field Tunnel Currents«, 14th International Conference on Ion Implantation Technology (IIT2002), Taos (NM), USA, 3 (2003)
- »Investigation of Lanthanum Contamination from a Lanthanated Tungsten Ion Source«, 14th International Conference on Ion Implantation Technology (IIT2002), Taos (NM), USA, 346-349 (2003)
- »Investigation of Rapid Thermal Annealed p-n Junctions in SiC«, International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Lyon (Frankreich) (2003)
- »Live-Vorführung einer Schaltungsmodifikation",«, Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie IISBIISB-Jahrestagung „Ionenstrahlen in der Siliciumtechnologie, Erlangen (2003)
- »Materialbearbeitung mittels fokussierter Ionenstrahlen zur TEM-Probenpräparation und Nanostrukturierung«, Materialography 40, 4 (2003)
- »Materials Processing by Focused Ion Beams for TEM Sample Preparation and Nanostructuring«, Materialography 40, 4 (2003)
- »Modelling of the Influence of the Schottky Barrier Inhomogeneities on SiC Diode Characteristics«, International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Lyon (Frankreich), - (2003)
- »Nanoscale Effects in Focused Ion Beam Processing«, Applied Physics A76, 1017-1023 (2003)
- »Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC«, Materials Science Forum, 433-436 (2003)
- »Trench Sidewall Doping for Lateral Power Devices«, ESSDERC 2003, Estoril, Portugal, 397 (2003)
- »Zirconium silicate films obtained from novel MOCVD precursors«, Journal of Non-Crystalline Solids 322, 147-153 (2003)
2002
2001
2000
1999
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