Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
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2005
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1998
1997
1996
- Untersuchungen über die Injektionsabhängigkeit der Minoritätsträger-Rekombinationslebensdauer in Silicium mit Hilfe des ELYMAT-Verfahrens
1995
1994
1993
1991
1990
1988
1987
Publikationen
2013
2012
2011
2010
2009
2008
2007
- »Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon,«, Spectrochimica Acta Part B: Atomic Spectroscopy 62, 481-484 (2007)
- »Characterization of the Pile-Up of As at the SiO2 / Si Interface«, 37th European Solid-State Device Research Conference - ESSDERC 2007, München (2007)
- »Characterization of the Pile-Up of As at the SiO2/Si Interface«, 37th European Solid-State Device Research Conference - ESSDERC 2007, München, 267 (2007)
- »Characterization of the Segregation of Arsenic at the Interface SiO2/Si«, 2007 MRS Spring Meeting, Symposium F "Semiconductor Defect Engineering-Materials, Synthetic Structures, and Devices II", San Francisco, CA, USA (2007)
- »Characterization of the Segregation of Arsenic at the Interface SiO2/Si«, Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, Warrendale 994, 0994-F08-02 (2007)
- »Custom-specific UV nanoimprint templates and life-time of antisticking layers«, Posterpräsentation auf der MNE 2007, Kopenhagen, Dänemark (2007)
- »Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement«, ECS Transactions 10, 117 (2007)
- »Hafnium silicate as control oxide in non-volatile memories«, Microelectronic Engineering 84, 2239-2242 (2007)
- »Hafnium silicate as control oxide in non-volatile memories«, Conference on Insulating Films on Semiconductors, Athen (2007)
- »High Temperature Implantation of Aluminum in 4H Silicon Carbide«, Materials Science Forum 556-557, 587 (2007)
- »MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications«, Chemical Vapor Deposition 13, 105-111 (2007)
- »MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications«, Surface and Coatings Technology 201, 9154-9158 (2007)
- »Motorintegrierte Leistungselektronik: Strukturflexibel mechatronisch integrierbare passive elektronische Bauelemente«, Industriekolloquium Sonderforschungsbereich 694,, Erlangen (2007)
- »Quantitative oxide charge determination by photocurrent analysis«, Microelectronics Reliability 47, 673-677 (2007)
- »Self-Aligned Growth of Organometallic Layers for Non-Volatile Memory Application«, European Congress on Advanced Materials and Processes 2007, Nürnberg (2007)
- »Silicon Technology«, 6th Indo-German Winter Academy 2007, Guwahati, Indien (2007)
- »Synthesis of functional nanoparticles«, International Congress on Particle Technology (PARTEC 2007), Nürnberg (2007)
- »UV nanoimprint materials: Surface energies, residual layers, and imprint quality«, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, 785-790 (2007)
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