Prof. Dr. rer. nat. Lothar Frey
| Name: | Prof. Dr. rer. nat. Lothar Frey
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| Postal address: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Room: | 1.122 |
| Phone number: | 09131/85-28633 |
| Fax number: | 09131/85-28698 |
| E-mail: | lothar.frey@leb.eei.uni-erlangen.de |
| Office hours: | weekly on tuesday 9:00 - 10:00
1.122
Bitte bei Sekretariat (1.121) anmelden.
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Courses / Lectures
Supervised theses
2013
2012
2011
2010
2009
2002
1999
1997
1996
1995
1994
- Erzeugung von Strukturen im Nanometerbereich mittels fokussierter Ionenstrahlen
- Schichtdickenmessungen an dünnen Siliziumdioxidschichten mittels Ellipsometrie und Röntgen-Photoelektronen-Spektroskopie
- Untersuchung phosphorimplantierten Siliciums mittels hochauflösender Röntgendiffraktometrie
1993
1992
Publications
2013
2012
2011
2010
- »A Highly Integrated EMI Filter Using Polymer Bonded Soft Magnetics As Core Material«, Applied Power Electronics Conference (APEC), Palm Springs, USA (2010)
- »Carbon junction implant: Effect on leakage currents and defect distribution«, ESSDERC 2010, Sevilla 5618224, 329-332 (2010)
- »Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques«, Journal of Vacuum Science and Technology B. Microelectronis and nanometer strucures 28, 595-607 (2010)
- »Deep doping profiles in silicon created by MeV proton implantation: Influence of implantation parameters«, 18th Intl. Conference on Ion Implantation Technology, Kyoto, Japan (2010)
- »Determination of the Dill parameters of thick positive resist for use in modeling applications«, 5th International Conference on Spectroscopic, Albany, NY, ? (2010)
- »Dielectic Layers suitable for high voltage integrated trench capacitors«, 16th Workshop on Dielectrics in Microelectronics WoDiM 2010, Bratislava (2010)
- »Dopant profiles in silicon created by MeV proton implantation: Influence of annealing parameters«, E-MRS 2010 Spring Meeting, Strassbourg, Frankreich (2010)
- »Effective Work function tuning in high-k dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping«, Journal of Applied Physics, 053506 (2010)
- »Effects of Oxygen and Forming Gas Annealing on ZnO TFTs«, MRS Fall Meeting 2010, Boston, - (2010)
- »Effizienzoptimierung integrierter elektrischer Antriebssysteme für Hybrid- und Elektrofahrzeuge«, Elektro Mobil Ausstellung 2010, Aschaffenburg, ? (2010)
- »Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers«, ECST Transactions 28, 139-156 (2010)
- »Evaluation of NbN thin films grown by MOCVD and plasma-ehhanced ALD for gate electrode application in high-k/SiO2 gate stacks«, Semiconductor Science And Technology 25, 045009 (2010)
- »Evolution of Shear Strength and Microstructure of Die Bonding Technologies for High Temperature«, 12th Electronics Packaging Technology Conference, Singapur, 660-667 (2010)
- »Evolution of Solder Joint Strength and Microstructure of High Temperature Lead Free Solders for SiC applications During Thermal Aging«, 12th electronics Packaging technology conference, Singapore, 660-667 (2010)
- »Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium«, EMRSEMRS Spring-Meeting 2010, Strasbourg (2010)
- »Fabrication of metakkic SPM Tipps by combining UV nanoimprint lithography and focused ion beam processing«, Microelectronic Engineering 87, 1123-1126 (2010)
- »Full Wafer Micolens, Repplication by UV Imprint Lithography«, Microelectronic Engineering 87, 1074-1076 (2010)
- »Future challenges in CMOS process modelling«, Thin Solid Film 518, 2478-2484 (2010)
- »Germanium substrate loss during thermal processing«, EMRSEMRS Spring Meeting 2010, Strasbourg (2010)
- »Highly sensitive wavefront sensor for visual inspection of bare and patterned silicon wafers«, Optical Micro- and Nanometrology III, Brussels, Belgium (2010)
- »Honeycomb Voids due to Ion Implantation in Germanium«, Thin Solid Films 518, 2323-2325 (2010)
- »Impact of forming gas annealing on ZnO-TFTs«, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 1548-1550 (2010)
- »Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles«, Microelectronic Engineering 87, 2312-2316 (2010)
- »Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations«, IEEE Electron Device Letters 31, 464-466 (2010)
- »Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil«, AmE 2010 Automotive meets Electronics, Dortmund, 72-77 (2010)
- »Modeling of the effectiv work funktion instability in metal/high-k dielectric stacks«, Journal of Applied Physics, 124514 (2010)
- »NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications«, 645-648, 1143-1146 (2010)
- »Optical inspection of flat reflective surfaces by a wave front sensor«, Reflection, Scattering, and Diffraction from Surfaces II, San Diego, California, USA 7792, 77920Q (2010)
- »Polymer bonded soft magnetics for EMI filter applications.«, Automotive meets Electronics, Dortmund, ? (2010)
- »Polymer bonded soft magnetics for EMI filter applications.«, Automotive meets Electronics, Dortmund, ? (2010)
- »Properties of SiO2 and Si3N4 as Gate Dielectrica for Printed ZnO Transistors«, 16th Workshop on Dielectric Materials, Bratislava (2010)
- »Reduced on restistance in LDMOS devices by integrating trench gates into planar technology«, IEEE Electron Device Letters 31, 464-466 (2010)
- »The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon«, ECS Trans. 33, 51-62 (2010),
http://dx.doi.org/10.1149/1.3485682
- »The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in FZ Si«, 218th ECS Meeting, Las Vegas, NV, USA (2010),
http://link.aip.org/link/?MAECES/1002/1557/1
- »Trench gate integration into planar technology for reduced on-resistance in LDMOS devices«, International Symposium on Power Semiconductors ans Devices ans ICs, Hiroshima, Japan, 181-184 (2010)
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, 6th World Congress on Particle Technology, Nürnberg (2010)
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, 6th World Congress on Particle Technology, Nürnberg, - (2010)
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1999
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