Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
2006
2005
2004
- Effiziente Datenstrukturen für die Simulation von Lithographieschritten
- Elektrische Charakterisierung von Isolatorschichten mit lateraler Auflösung im Sub-Mikrometerbereich
- Entwicklung eines bidirektionalen Sperrwandlers
- Entwicklung von Systemlösungen zur Schadensbegrenzung beim Ausfall leistungselektronischer Bauelemente
- Ermittlung der Oxidladung und der Grenzflächenzustandsdichte von Isolator/Siliciumgrenzflächen mit Hilfe des Elymat-Verfahrens
2003
2002
2001
1999
1998
1997
1996
1995
1994
1993
1991
1990
1988
1987
Publikationen
2013
2012
2011
2010
- »Deep doping profiles in silicon created by MeV proton implantation: Influence of implantation parameters«, 18th Intl. Conference on Ion Implantation Technology, Kyoto, Japan (2010)
- »Defects formed by pulsed laser annealing: electrical properties and depth profiles in n-type silicon measured by DLTS«, EMRS Spring Meeting 2010, Strasbourg (2010)
- »Dielectic Layers suitable for high voltage integrated trench capacitors«, 16th Workshop on Dielectrics in Microelectronics WoDiM 2010, Bratislava (2010)
- »Dopant profiles in silicon created by MeV proton implantation: Influence of annealing parameters«, E-MRS 2010 Spring Meeting, Strassbourg, Frankreich (2010)
- »Effective Work function tuning in high-k dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping«, Journal of Applied Physics, 053506 (2010)
- »Effects of Oxygen and Forming Gas Annealing on ZnO TFTs«, MRS Fall Meeting 2010, Boston, - (2010)
- »Germanium substrate loss during thermal processing«, EMRSEMRS Spring Meeting 2010, Strasbourg (2010)
- »Honeycomb Voids due to Ion Implantation in Germanium«, Thin Solid Films 518, 2323-2325 (2010)
- »Impact of forming gas annealing on ZnO-TFTs«, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 1548-1550 (2010)
- »Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles«, Microelectronic Engineering 87, 2312-2316 (2010)
- »Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil«, AmE 2010 Automotive meets Electronics, Dortmund, 72-77 (2010)
- »Modeling of the effectiv work funktion instability in metal/high-k dielectric stacks«, Journal of Applied Physics, 124514 (2010)
- »NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications«, 645-648, 1143-1146 (2010)
- »Polymer bonded soft magnetics for EMI filter applications.«, Automotive meets Electronics, Dortmund, ? (2010)
- »Polymer bonded soft magnetics for EMI filter applications.«, Automotive meets Electronics, Dortmund, ? (2010)
- »Properties of SiO2 and Si3N4 as Gate Dielectrica for Printed ZnO Transistors«, 16th Workshop on Dielectric Materials, Bratislava (2010)
- »The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon«, ECS Trans. 33, 51-62 (2010),
http://dx.doi.org/10.1149/1.3485682
- »The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in FZ Si«, 218th ECS Meeting, Las Vegas, NV, USA (2010),
http://link.aip.org/link/?MAECES/1002/1557/1
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, 6th World Congress on Particle Technology, Nürnberg (2010)
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, 6th World Congress on Particle Technology, Nürnberg, - (2010)
2009
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2006
2005
2004
2003
2002
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