Prof. Dr. rer. nat. Lothar Frey
| Name: | Prof. Dr. rer. nat. Lothar Frey
|
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Zimmer: | 1.122 |
| Telefonnummer: | 09131/85-28633 |
| Fax: | 09131/85-28698 |
| E-Mail: | lothar.frey@leb.eei.uni-erlangen.de |
| Sprechstunde: | wöchentlich dienstags 9:00 - 10:00
1.122
Bitte bei Sekretariat (1.121) anmelden.
|
Lehrveranstaltungen
Betreute Arbeiten
2013
2012
2011
2010
2009
2002
1999
1997
- Herstellung von nanostrukturierten Rastersonden mittels fokussierter Ionenstrahlen
1996
1995
1994
1993
1992
Publikationen
2013
2012
2011
- »4H-SiC N-MOSFET Logic Circuits for High Temperature Operation«, Materials Science Forum 679-680, 734-737 (2011)
- »A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers«, J. Appl. Phys. 110, 054104 (2011),
http://link.aip.org/link/doi/10.1063/1.3631088
- »A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions«, International Journal of Electronics, 1025-1054 (2011)
- »Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications«, Thin Solid Films 519, 5892-5898 (2011)
- »Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor«, Journal of Vacuum Science and Technology B 29 29, 01AA05 (2011)
- »Characterization of thickness variations of thin dielectric layers at the nanoscale using Scanning Capacitance Microscopy«, Journal of Vacuum Science and Technology B 29 29, 01A401 (2011)
- »Comparative Study on Metallization an Passivation Materials for High Temperature Sensor Applications«, Materials Science Forum 679-680, 449-452 (2011)
- »Conduction Mechanisms and Environmentel Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Tranistors«, Small 7, 2853-2857 (2011)
- »Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles«, Solid State Phenomena, 375-384 (2011)
- »Current Voltage Characteristics through Grains and Grain Boundaries of High-k Dielectric Thin Films Measured by Tunneling Atomic Force Microscopy«, (Poster) International Conference on Frontiers of Characterization ans Metrology for Nanoelectronics, Grenoble (2011)
- »Current Voltage Characteristics through Grains and Grain Boundaries of High-k Dielectric Thin Films Measured by Tunneling Atomic Force Microscopy«, FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011, Grenoble (France) 1395, 134 (2011),
http://link.aip.org/link/doi/10.1063/1.3657879
- »Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters«, AIP Conf. Proc. 1321, 257-260 (2011)
- »Dielectric layers suitable for high voltage integrated trench capacitors«, Journal of Vacuum Science and Technology B. Microelectronis and nanometer Strucures 29, 01AB04 (2011),
http://publica.fraunhofer.de/documents/N-151331.html
- »Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters«, Phys. Status Solidi 8, 697-700 (2011),
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000161/abstract
- »Effects of Oxygen and Forming Gas Annealing on ZnO TFTs«, MRS Fall Meeting 2010, Boston, 1287 (2011)
- »Enhancement of Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications«, Materials Science Forum Vols 679-680/Journal of Electronic Matrials 40, 449-452 (2011)
- »EPR investigations of non-oxidized silicon nanoparticles from thermal pyrolysis of silane«, physica status solidi, 7 (2011)
- »Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium«, Microelectronic Engineering 88, 458-461 (2011)
- »Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks«, Journal of Vacuum Science and Technology B 29, 01A905 (2011)
- »Germanium substrate loss during thermal processing«, Microelectronic Engineering 88, 499-502 (2011)
- »Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures«, Journal of applied physics 109, 07610 (2011)
- »Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC«, Materials Science Forum, 417-420 (2011)
- »Investigation of the reliability of 4H-SiC MOS devices for high temperature applications«, Microelectronics Reliability 51, 1346-1350 (2011)
- »Lanthanoid Implantation for Effective Work Function Control in NMOS High-kappa/Metal Gate Stacks«, 18th International Conference on Ion Implantation Technology IIT 2010, - 1321, 237-240 (2011)
- »Manufactoring, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy«, Microelectronic Engineering, 2584-2588 (2011)
- »Monolithic RC-snubber for power electronic applications«, 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems (PEDS), Singapur, 11-14 (2011),
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6147217&isnumber=6146804
- »Ohmic and rectifying contacts on bulk AlN for radiation detector applications (Poster)«, (Poster) ICNS-9, Glasgow, Glasgow (2011)
- »Properties of SiO2 and Si3N4 as Gate Dielectrics for Printed ZnO Transistors«, Journal of Vacuum Science & Technology B 29, 01A601 (2011)
- »Purity of Ion Beams: Analysis and Simulation of Mass Spectra and Mass Interferences in Ion Implantation«, Advanced Materials Science and Engineering, - (2011)
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, Advanced Powder Technology 22, 253-256 (2011)
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
Nach oben
