Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
1999
1998
1997
1996
1995
1994
1993
1991
1990
1988
- Herstellung und Untersuchung von NMOS-Strukturen
- Korngefüge und Leitfähigkeit von Polysilicium als Funktion der Abscheidetemperatur im Niederdruckbereich
1987
Publikationen
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
- »"Monte Carlo Simulation and Modeling of Ion Implantation Induced Contamination Profiles«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, - (2000)
- »A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation«, IEICE TRANSACTION on Electronics E83-C, 1259-1266 (2000)
- »Adhesion and proliferation of keratinocytes on ion beam modified polyethylene«, Journal of materials science: Materials in medicine, 655-660 (2000)
- »Aspects of Barium Contamination in High Dielectric Dynamic Random Access Memories«, J. Electrochem. Soc 147, 4297 (2000)
- »Contamination Control for Ion Implantation«, IIT School, Edgewater, 564-601 (2000)
- »Contamination Control for Ion Implantation«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
- »Defects and Gallium-Contamination During Focused Ion Beam Micro Machining«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
- »Diffusion (IMEC Short Course)«, Silicon Processing for ULSI Circuit Fabrication, Leuven, Belgien (2000)
- »Electrical Reliability Aspects of Through the Gate Implanted MOS-Structures with Thin Oxides«, 11th Workshop on Dielectrics in Microelectronics (WoDiM), München (2000)
- »Enhanced Depth-Resolution Analysis with Medium Energy Ion scattering (MEIS) for Shallow Junction Profiling«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
- »Field emitter array fabricated using focused ion and electron beam induced reaction«, Journal of Vacuum Science and Technology B 2, 976-979 (2000)
- »Gate Oxide Damage Due to Through the Gate Implantation in MOS-Structures with Ultrathin and Standard Oxides«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, 103-106 (2000)
- »Investigation of Molybdenum Contamination in 11B+ and 31P+ Implants«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
- »Ion Implantation«, Silicon Processing for ULSI Circuit Fabrication (IMEC short course), Leuven, Belgien (2000)
- »Modeling the pH response of silicon nitride ISFET devices«, Sensors and Actuators B: Chemical 68, 307-312 (2000)
- »Modellierung der Diffusion von Aluminium in Silicium«, Berichtskolloquium DFG-Schwerpunktprogramm "Halbleiterbauelemente hoher Leistung", Karlsruhe, 8 (2000)
- »Modelling of Intrinsic Aluminum Diffusion for Future Power Devices«, 30th European Solid State Device Research Conference, Cork, Irland, 176-179 (2000)
- »Monte Carlo Simulation and Modeling of Ion Implantation Induced Contamination Profiles«, Ion Implantation Technology 2000, Alpbach (2000)
- »Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide«, Materials Science Forum, 338-342 (2000)
- »Safety Considerations for Ion Implanters«, IIT School, Edgewater (2000)
- »Safety Considerations for Ion Implanters«, XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, Österreich (2000)
1999
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