Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
1999
1998
1997
1996
1995
1994
1993
1991
1990
1988
- Herstellung und Untersuchung von NMOS-Strukturen
- Korngefüge und Leitfähigkeit von Polysilicium als Funktion der Abscheidetemperatur im Niederdruckbereich
1987
Publikationen
2013
2012
2011
- »4H-SiC N-MOSFET Logic Circuits for High Temperature Operation«, Materials Science Forum 679-680, 734-737 (2011)
- »A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions«, International Journal of Electronics, 1025-1054 (2011)
- »Conduction Mechanisms and Environmentel Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Tranistors«, Small 7, 2853-2857 (2011)
- »Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters«, AIP Conf. Proc. 1321, 257-260 (2011)
- »Defects Formed by Pulsed Laser Annealing: Electrical Properties and Depth Profiles in n-Type Silicon Measured by Deep Level Transient Spectroscopy«, phys. stat. sol. (c) 8, 956-959 (2011)
- »Dielectric layers suitable for high voltage integrated trench capacitors«, Journal of Vacuum Science and Technology B. Microelectronis and nanometer Strucures 29, 01AB04 (2011),
http://publica.fraunhofer.de/documents/N-151331.html
- »Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters«, Phys. Status Solidi 8, 697-700 (2011),
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000161/abstract
- »Effects of Oxygen and Forming Gas Annealing on ZnO TFTs«, MRS Fall Meeting 2010, Boston, 1287 (2011)
- »Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks«, Journal of Vacuum Science and Technology B 29, 01A905 (2011)
- »Germanium substrate loss during thermal processing«, Microelectronic Engineering 88, 499-502 (2011)
- »High pressure oxidation of 4H-SiC in nitric acid vapor«, Japanese Journal of Applied Physics 50, k.a. (2011)
- »Investigation of the reliability of 4H-SiC MOS devices for high temperature applications«, Microelectronics Reliability 51, 1346-1350 (2011)
- »Lanthanoid Implantation for Effective Work Function Control in NMOS High-kappa/Metal Gate Stacks«, 18th International Conference on Ion Implantation Technology IIT 2010, - 1321, 237-240 (2011)
- »Monolithic RC-snubber for power electronic applications«, 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems (PEDS), Singapur, 11-14 (2011),
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6147217&isnumber=6146804
- »Properties of SiO2 and Si3N4 as Gate Dielectrics for Printed ZnO Transistors«, Journal of Vacuum Science & Technology B 29, 01A601 (2011)
- »Purity of Ion Beams: Analysis and Simulation of Mass Spectra and Mass Interferences in Ion Implantation«, Advanced Materials Science and Engineering, - (2011)
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, Advanced Powder Technology 22, 253-256 (2011)
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