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Prof. Dr. rer. nat. Lothar Frey

Name:	Prof. Dr. rer. nat. Lothar Frey
Postal address:	Lehrstuhl für Elektronische Bauelemente Cauerstr. 6 91058 Erlangen
Room:	1.122
Phone number:	09131/85-28633
Fax number:	09131/85-28698
E-mail:	lothar.frey@leb.eei.uni-erlangen.de
Office hours:	weekly on tuesday 9:00 - 10:00 1.122 Bitte bei Sekretariat (1.121) anmelden.

Courses / Lectures

• Anleitung zum wissenschaftlichen Arbeiten
• Übung zu Leistungshalbleiterbauelemente
• Halbleiterbauelemente
• Leistungshalbleiterbauelemente
• Nanoelektronik
• Produktion in der Siliciumtechnologie
• Prozessintegration und Bauelementearchitekturen
• Technologie integrierter Schaltungen

Supervised theses

2013

2012

2011

2010

2009

2002

• Nanostrukturen für nichtflüchtige Speicher

1999

1997

1996

1995

1994

1993

1992

Publications

2013

2012

2011

2010

2009

2008

2007

2006

2005

• »Additional Peaks in Mass Spectra Due to Charge Exchange Events and Dissociation of Molecular Ions During Extraction«, Nuclear Instruments and Methods in Physics Research B 237, 346-350 (2005)
• »Aluminium Nitride Thin Films for a Micromechanical Ultrasonic Liquid Nebulizer«, SENSORS AND MICROSYSTEMS, Singapore (2005)
• »Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing«, Proceedings of ECSCRM, Materials Science Forum, 483 (2005)
• »Characterization of Interface State Densities by Photocurrent Analysis: Comparison of Results for Different Insulator Layers«, Microelectronic Engineering 80, 50-53 (2005)
• »Characterization of Interface State Denisties by Photocurrent Analysis: Comparison of Results for Different Insulator Layers«, Poster Presentation, Conference on Insulating Fillms on Semiconductors (INFOS) 2005, Leuven, Belgium (2005)
• »Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren«, Chemie Ingenieur Technik 77, 1215 (2005)
• »Electrical properties of hafnium silicate films obtained form a single-source MOCVD precursor«, Microelectronics Reliability, 819 (2005)
• »High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor«, 9, 873 (2005)
• »Implantation and Annealing of Aluminium in 4H Silicon Carbide«, Nuclear Instruments and Methods in Physics Research B 237, 68-71 (2005)
• »Investigations into the Wear of a WL10 Ion Source«, Nuclear Instruments and Methods in Physics Research B 237, 341-345 (2005)
• »Nanoelectronics at the Fraunhofer IISB and the University in Erlangen«, Poster for the "First International Nanotechnology Conference on Communication & Cooperation" (INC 1), San Francisco, CA, USA (2005)
• »Nanotechnology in the Fraunhofer Microelectronics Alliance (VµE)«, Poster for the "First International Nanotechnology Conference on Communication & Cooperation" (INC 1), San Francisco, CA, USA (2005)
• »Stempel für Mikrochips«, Zukunft im Brennpunkt, Arbeitsgemeinschaft der Bayerischen Forschungsverbünde (abayfor) 4/2005, 75 (2005)
• »Thin HfxTiySizO Films with Varying Hf to Ti Contents as Candidates for High-k Dielecrics«, 5/2005, 125 (2005)
• »Triple Trench Gate IGBTs«, Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs (ISPSD) 2005, 251-254 (2005)
• »Triple Trench Gate IGBTs«, 17th International Symposium on Power Semiconductor Devices & ICs (ISPSD), Santa Barbara, CA, USA (2005)
• »Wafer Scale Characterization of Interface State Densities Without Test Structures by Photocurrent Analysis«, Electrochemical Society Proceedings, 10, 113 (2005)
• »Wafer Scale Characterization of Interface State Densities Without Test Structures by Photocurrent Analysis«, DECON 2005, "Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV", Grenoble, France (2005)

2004

2003

2002

2001

2000

1999

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