Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
- Entwicklung eines kostenoptimierten Frequenzumrichters
- Untersuchungen zur Realisierbarkeit einer mehrkanaligen analogen Signalübertragung über eine Stromschleife unter Berücksichtigung der extremen elektromagnetischen Störfelder in einem Hochleistungsumrichter.
2001
1999
1998
1997
1996
1995
1994
1993
1991
1990
1988
1987
Publikationen
2013
2012
2011
2010
- »Deep doping profiles in silicon created by MeV proton implantation: Influence of implantation parameters«, 18th Intl. Conference on Ion Implantation Technology, Kyoto, Japan (2010)
- »Defects formed by pulsed laser annealing: electrical properties and depth profiles in n-type silicon measured by DLTS«, EMRS Spring Meeting 2010, Strasbourg (2010)
- »Dielectic Layers suitable for high voltage integrated trench capacitors«, 16th Workshop on Dielectrics in Microelectronics WoDiM 2010, Bratislava (2010)
- »Dopant profiles in silicon created by MeV proton implantation: Influence of annealing parameters«, E-MRS 2010 Spring Meeting, Strassbourg, Frankreich (2010)
- »Effective Work function tuning in high-k dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping«, Journal of Applied Physics, 053506 (2010)
- »Effects of Oxygen and Forming Gas Annealing on ZnO TFTs«, MRS Fall Meeting 2010, Boston, - (2010)
- »Germanium substrate loss during thermal processing«, EMRSEMRS Spring Meeting 2010, Strasbourg (2010)
- »Honeycomb Voids due to Ion Implantation in Germanium«, Thin Solid Films 518, 2323-2325 (2010)
- »Impact of forming gas annealing on ZnO-TFTs«, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 1548-1550 (2010)
- »Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles«, Microelectronic Engineering 87, 2312-2316 (2010)
- »Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil«, AmE 2010 Automotive meets Electronics, Dortmund, 72-77 (2010)
- »Modeling of the effectiv work funktion instability in metal/high-k dielectric stacks«, Journal of Applied Physics, 124514 (2010)
- »NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications«, 645-648, 1143-1146 (2010)
- »Polymer bonded soft magnetics for EMI filter applications.«, Automotive meets Electronics, Dortmund, ? (2010)
- »Polymer bonded soft magnetics for EMI filter applications.«, Automotive meets Electronics, Dortmund, ? (2010)
- »Properties of SiO2 and Si3N4 as Gate Dielectrica for Printed ZnO Transistors«, 16th Workshop on Dielectric Materials, Bratislava (2010)
- »The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon«, ECS Trans. 33, 51-62 (2010),
http://dx.doi.org/10.1149/1.3485682
- »The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in FZ Si«, 218th ECS Meeting, Las Vegas, NV, USA (2010),
http://link.aip.org/link/?MAECES/1002/1557/1
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, 6th World Congress on Particle Technology, Nürnberg (2010)
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, 6th World Congress on Particle Technology, Nürnberg, - (2010)
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