Prof. Dr.-Ing. Heiner Ryssel
| Name: | Prof. Dr.-Ing. Heiner Ryssel
ehem. Lehrstuhlinhaber (im Ruhestand) |
| Postanschrift: | Lehrstuhl für Elektronische Bauelemente
Cauerstr. 6
91058 Erlangen |
| Telefonnummer: | 09131/761-109 |
| Fax: | 09131/85-28698 |
| E-Mail: | heiner.ryssel@leb.eei.uni-erlangen.de |
Lehrveranstaltungen
Wissenschaftliche Schwerpunkte
- CMOS-Technologie
- Halbleiterfertigungsgeräte
- Ionenimplantation
- elektronische Bauelemente
- Sensorik
Betreute Arbeiten
2012
2011
2010
- Entwicklung einer Energieversorgung für beheizbare Bekleidung
- Entwicklung eines digitalen Reglers für zweistufige isolierende Gleichspannungswandler
- Entwicklung eines Elektrofahrrades
- Untersuchungen zum Einfluss der Luftströmung in einer Konvektionslötanlage auf hochminiaturisierte elektronische Bauelemente
2009
2008
2007
2006
2005
2004
2003
2002
2001
1999
1998
1997
1996
1995
1994
1993
1991
1990
1988
1987
Publikationen
2013
2012
2011
- »4H-SiC N-MOSFET Logic Circuits for High Temperature Operation«, Materials Science Forum 679-680, 734-737 (2011)
- »A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions«, International Journal of Electronics, 1025-1054 (2011)
- »Conduction Mechanisms and Environmentel Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Tranistors«, Small 7, 2853-2857 (2011)
- »Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters«, AIP Conf. Proc. 1321, 257-260 (2011)
- »Defects Formed by Pulsed Laser Annealing: Electrical Properties and Depth Profiles in n-Type Silicon Measured by Deep Level Transient Spectroscopy«, phys. stat. sol. (c) 8, 956-959 (2011)
- »Dielectric layers suitable for high voltage integrated trench capacitors«, Journal of Vacuum Science and Technology B. Microelectronis and nanometer Strucures 29, 01AB04 (2011),
http://publica.fraunhofer.de/documents/N-151331.html
- »Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters«, Phys. Status Solidi 8, 697-700 (2011),
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000161/abstract
- »Effects of Oxygen and Forming Gas Annealing on ZnO TFTs«, MRS Fall Meeting 2010, Boston, 1287 (2011)
- »Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks«, Journal of Vacuum Science and Technology B 29, 01A905 (2011)
- »Germanium substrate loss during thermal processing«, Microelectronic Engineering 88, 499-502 (2011)
- »High pressure oxidation of 4H-SiC in nitric acid vapor«, Japanese Journal of Applied Physics 50, k.a. (2011)
- »Investigation of the reliability of 4H-SiC MOS devices for high temperature applications«, Microelectronics Reliability 51, 1346-1350 (2011)
- »Lanthanoid Implantation for Effective Work Function Control in NMOS High-kappa/Metal Gate Stacks«, 18th International Conference on Ion Implantation Technology IIT 2010, - 1321, 237-240 (2011)
- »Monolithic RC-snubber for power electronic applications«, 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems (PEDS), Singapur, 11-14 (2011),
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6147217&isnumber=6146804
- »Properties of SiO2 and Si3N4 as Gate Dielectrics for Printed ZnO Transistors«, Journal of Vacuum Science & Technology B 29, 01A601 (2011)
- »Purity of Ion Beams: Analysis and Simulation of Mass Spectra and Mass Interferences in Ion Implantation«, Advanced Materials Science and Engineering, - (2011)
- »Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment«, Advanced Powder Technology 22, 253-256 (2011)
2010
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